Investigation of electrophysical and optical properties of the δ-silicon doped GaAs layers grown by MBE method on the (111)A GaAs surfaces disoriented toward [21-bar1-bar]

Electrical and photoluminescence (PL) studies are made of the δ-Si doped GaAs structures grown on (111)A both precise and disoriented toward [21-bar1-bar] direction substrates by molecular-beam epitaxy for different relations of the partial pressures PAs/PGa = γ. The Hall effect measurements have revealed that the conductivity is changed from p- to n-type as As pressure goes up. The observed modifications of PL-spectra are explained in the framework of a kinetic approach taking into account the free chemical bond density discrepancy across the terrace and steps peculiar to the vicinal surface due to substrate disorientation toward [21-bar1-bar] direction