Published 1986 | Version v1
Book Metadata-only

Electrical characteristics of silicon p/sup +/n diodes fabricated by B/sup +/ implantation and rapid thermal annealing in the temperature range 700 - 10000C

Creators

  • 1. Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466 (Japan)

Description

B/sup +/ implanted p/sup +/n diodes were fabricated by rapid thermal annealing (RTA) in the temperature range 700 - 11000C. Values of series resistance of diodes decreased with the annealing temperatures. Leakage current (Ir) was independent of the RTA temperatures. Residual defect concentrations increased in the range 700 - 9000C and decreased in the range 1000 - 11000C. Concentrations of defects with the energy levels of E/sub c-/ 0.33 and E/sub c/ - 0.48 eV were -- 10/sup 12/ cm/sup -3/ for diodes fabricated at 11000C. The growth of defects in the range 700 - 9000C was ascribed to the diffusion of defects from the implanted layer during annealing

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-37-5
Imprint Title
Materials issues in silicon integrated circuit processing
Journal Page Range
p. 211-216.

Conference

Title
Materials Research Society spring meeting.
Dates
15-18 Apr 1986.
Place
Palo Alto, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20002226
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; BORON IONS; CRYSTAL DEFECTS; DIFFUSION; ELECTRICAL PROPERTIES; ENERGY LEVELS; FABRICATION; FEASIBILITY STUDIES; HIGH TEMPERATURE; ION IMPLANTATION; SILICON DIODES
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES