Ar implantation of InSb and AlN at 15 K

Ar ion implantation-induced damage formation in InSb and AlN was studied by Rutherford backscattering spectrometry with both implantation and measurement being performed at 15 K without change of the target temperature. InSb can be easily amorphised with ion fluences ≥8 x 1012 cm-2. AlN is not rendered amorphous for ion fluences up to 5 x 1015 cm-2. The main reason for that difference is that in InSb each ion produces amorphous material, whereas in AlN only point defects or point defect complexes remain from a single ion impact. A comparison with the results for other III-V compounds is given