Published 1995
| Version v1
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Investigation of radiation damage in ion implanted and annealed SiC layers
- 1. Institut fur Festkorperphysik, Friedrich-Schiller-Universitaet, Jena, (Germany)
- 2. Erlangen-Nuernberg Univ., Erlangen (Germany). Inst. fuer Werkstoffwissenschaften
Description
Short communication
Files
28072619.pdf
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10097.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28072619
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ANTIMONY IONS; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; GALLIUM IONS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SILICON CARBIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELASTIC SCATTERING; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SCATTERING; SILICON COMPOUNDS