Published April 7, 2003
| Version v1
Journal article
Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy
Creators
- 1. Microphysics Laboratory, Physics Department, University of Illinois, Chicago, Illinois 60607-7059 (United States)
- 2. Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)
Description
Surface crater defects in HgCdTe epilayers grown by molecular-beam epitaxy have been investigated using cross-sectional scanning and transmission electron microscopy, as well as atomic force microscopy. These defects originated primarily within the HgCdTe films, and were shown to be associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te intergrowths with either semicoherent or incoherent grain boundaries, as well as small HgCdTe inclusions embedded within Te grains
Additional details
Identifiers
- DOI
- 10.1063/1.1566462;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 14
- Journal Page Range
- p. 2275-2277
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037729
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CADMIUM TELLURIDES; GRAIN BOUNDARIES; INCLUSIONS; MERCURY TELLURIDES; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EPITAXY; MATERIALS; MERCURY COMPOUNDS; MICROSCOPY; MICROSTRUCTURE; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.