Published February 1988 | Version v1
Journal article Metadata-only

Determination of doping profiles for low boron ion implantations in silicon

Creators

  • 1. Technical Univ., Bratislava (Czechoslovakia). Dept. of Microelectronics
  • 2. Technical Univ., Prague (Czechoslovakia). Dept. of Solid State Engineering

Description

A method for determination of doping profiles from the silicon surface to the deep bulk using a high frequency C-V technique is presented. Experimental results using Ziegler's method for obtaining the profile near the surface are compared with theoretical calculations assuming Gauss type distribution and using spreading resistance measurements. Doping profiles of boron implanted at 60 keV with doses in the range of 6 x 1010 - 3 x 1012 cm-2 were investigated. The obtained peak value of the profile N(x) and its linear dependence on the implanted dose Nsub(d) can be used for the determination of low boron doses in p-type silicon substrates during MOS device fabrication. (author)

Additional details

Publishing Information

Journal Title
Solid-State Electron.
Journal Volume
31
Journal Issue
2
Series
Solid-State Electron.
Journal Page Range
265-268
ISSN
0038-1101
CODEN
SSELA

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
19047788
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BORON IONS; DEBYE LENGTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GAUSS FUNCTION; ION IMPLANTATION; MOS TRANSISTORS; P-TYPE CONDUCTORS; PENETRATION DEPTH; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DISTRIBUTION; ELECTRICAL PROPERTIES; ELEMENTS; FUNCTIONS; IONS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSISTORS