Published June 21, 2007 | Version v1
Journal article

The influence of the thickness of TiO2 seeding layer on structural and electrical properties of Bi3.15Nd0.85Ti3O12 thin films

  • 1. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

Description

Thin films of Bi3.15Nd0.85Ti3O12(BNT) and BNT with various TiO2 seeding layer thicknesses BNT-Tx (x = 10, 20, 30 nm) were fabricated on Pt/Ti/SiO2/Si substrates by the sol-gel method. The influence of the TiO2 seeding layer thickness on the structural and the electrical properties of BNT thin films was investigated. The x-ray diffraction pattern indicated that the BNT thin film with a TiO2 seeding layer showed a-axis preference orientation. The Pr value was a maximum for the BNT-T20 film and decreased with both decreasing and increasing thickness. The BNT-T20 film had the largest εr and the lowest tanδ. The leakage current density of the BNT thin films with various TiO2 seeding layer thicknesses was generally in the order of 10-6-10-5 A cm-2. The surface micrograph of BNT-Tx films was more homogeneous and dense than that without a seeding layer

Additional details

Identifiers

DOI
10.1088/0022-3727/40/12/034;
PII
S0022-3727(07)40584-8;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
40
Journal Issue
12
Journal Page Range
p. 3788-3792
ISSN
0022-3727
CODEN
JPAPBE