Tuning structural, optical, electrical and photovoltaic characteristics of n-type CdS${}_{1-x}$Sb${}_x$ layers for optimizing the performance of n-(CdS:Sb)/p-Si solar cells

The structural, optical, electrical and photoelectric properties of n-type CdS${}_{1-x}$Sb${}_x$ layers at varied Sb doping concentrations (x = 0, 0.2, 0.4 and 0.6 at.%) were studied. The melt quenching process was used to generate the bulk form, whereas the thin layers were formed using the thermal evaporation method. To fabricate the Al/n-(CdS:Sb)/p-Si/Pt solar cell, pure CdS and antimony-doped CdS layers of up to 200 nm thickness (n-type side) were deposited on a single-crystallized silicon glass substrate (2 mm) with the Miller's directions (1 0 0). The fabricated solar cells' dark and illuminated current density-voltage (J-V), the power-voltage (P-V) and the capacitance-voltage (C-V) characteristics were thoroughly studied. As well, the open-circuit voltage, the short-circuit current, the fill factor and the power conversion efficiency (PCE) for the studied solar cell were computed. When the antimony ratio is 0.6 at.%, the maximum power conversion efficiency is 30.56%, with the main parameters: J${}_{sc}$ = 26.27 mA/cm${}^2$, V${}_{oc}$ = 0.84 V, and FF = 0.692. In the instance of using the manufactured devices as detectors, the responsivity and quantum efficiency in the spectrum range of (100-1000 nm) were determined.