Published August 2, 2019 | Version v1
Journal article

Parallel direct writing achromatic talbot lithography: a method for large-area arbitrary sub-micron periodic nano-arrays fabrication

  • 1. Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204 (China)

Description

Metasurfaces with complex periodic nanoarrays have attracted a large amount of attention over the past decades due to their pronounced plasmonic and photonic properties. Though various metasurface properties have been theoretically and experimentally investigated, the realization of practical metasurface applications remains a big challenge due to very limited large-area complex nanostructure fabrication. In this paper, we demonstrate a parallel direct writing achromatic Talbot lithography (DW-ATL) technique for large-area arbitrary sub-micron periodic nano-arrays fabrication. By using a laser interferometer, the sparse hole/dot arrays obtained by ATL could be stitched precisely between discrete multiple exposures. Complex sub-micron periodic nanoarrays, such as elliptical discs, rods, L-shaped and Y-shaped periodic nanoarrays, with a sub-hundred nm resolution were fabricated over an area of ∼mm2. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab1108

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
30
Journal Issue
31
Journal Page Range
[9 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51051004
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
FABRICATION; HOLES; INTERFEROMETERS; LASERS; NANOSTRUCTURES; PERIODICITY
Descriptors DEC
MEASURING INSTRUMENTS; VARIATIONS