Making porous membranes by chemical etching of heavy-ion tracks in β-PVDF films
Creators
- 1. CEA Saclay, DSM-DRECAM-LSI-LPI Bat. 466, 91191 Gif-sur-Yvette Cedex (France)
Description
Production of porous membranes using heavy ion bombardment and subsequent chemical etching of poly(vinylidene difluoride) (PVDF) films has been reported several years ago. However, porous membranes with pore diameter in the nanometer scale requires a better understanding of the chemical etching mechanism. In this work PVDF foils irradiated with Sn ions (2.85 MeV per nucleon) were exposed to several etching conditions which involved permanganate oxidation in different alkaline environments. The solution of KOH 9 mol L-1 and saturated in KMnO4 was the best etching reactant for PVDF. Functional groups created in the alkaline and oxidative attack by permanganate were studied by FT-IR and UV-vis spectroscopy. The spectroscopic data reveals that the formation of pores occurs by a two-step mechanism: (i) double bonds as a result of dehydrofluorination induced by alkaline media and (ii) oxidation of these double bonds in permanganate solution. The etching temperature and time can be attuned to prepare track-etched membrane with a desired pore diameter in the range of few hundred nanometers. Temperatures ranged between 55 deg. C and 65 deg. C were optimal to produce cylindrical pores. Temperatures higher than 85 deg. C induce conical-shaped track-etched pores while temperatures lower than 50 deg. C slow down the chemical attack. The addition of a phase-transfer agent enhances the chemical attack and allows the decrease of the etching temperature and/or time
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.04.027;
- PII
- S0168-583X(05)00538-0;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 236
- Journal Issue
- 1-4
- Journal Page Range
- p. 501-507
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 6. international symposium on ionizing radiation and polymers
- Acronym
- IRaP 2004
- Dates
- 25-30 Sep 2004
- Place
- Houffalize (Belgium)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37022829
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOUBLE BONDS; ETCHING; FILMS; FOILS; FOURIER TRANSFORMATION; HEAVY IONS; INFRARED SPECTRA; IRRADIATION; MEMBRANES; MEV RANGE 01-10; OXIDATION; PARTICLE TRACKS; PERMANGANATES; POROUS MATERIALS; POTASSIUM HYDROXIDES; SOLUTIONS; TEMPERATURE RANGE 0273-0400 K; TIN IONS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHARGED PARTICLES; CHEMICAL BONDS; CHEMICAL REACTIONS; DISPERSIONS; ENERGY RANGE; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; HYDROXIDES; INTEGRAL TRANSFORMATIONS; IONS; MANGANESE COMPOUNDS; MATERIALS; MEV RANGE; MIXTURES; OXYGEN COMPOUNDS; POTASSIUM COMPOUNDS; SPECTRA; SURFACE FINISHING; TEMPERATURE RANGE; TRANSFORMATIONS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.