Published September 2019 | Version v1
Journal article

A non-local structural derivative model for memristor

  • 1. State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Center for Numerical Simulation Software in Engineering and Sciences, College of Mechanics and Materials, Hohai University, Nanjing 210098 (China)
  • 2. National Engineering Research Center for Intelligent Electrical Vehicle Power System, School of Electromechanical Engineering, Qingdao University, Qingdao, Shandong, 266071 (China)

Description

The memristor is of great application and significance in the integrated circuit design, the realization of large-capacity non-volatile memories and the neuromorphic systems. This paper firstly proposes the non-local structural derivative memristor model with two-degree-of-freedom increased to portray the memory effect of memristor. Actually, the developed is a more generalized model that will be reduced to the classical one when the fractal characteristic index α = 1. The proposed model is more flexible than the classical ideal memory model and Riemann Liouville memristor model under the same conditions. In addition, the memory effect described by the present scheme could be adjusted by the position parameter δ. This work provides a new methodology not only to describe the memory effect of the memristor, but also to easily portray the memristor with ultra-weak memory.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.chaos.2019.05.040

Additional details

Identifiers

DOI
10.1016/j.chaos.2019.05.040;
PII
S096007791930205X;

Publishing Information

Journal Title
Chaos, Solitons and Fractals
Journal Volume
126
Journal Page Range
p. 169-177
ISSN
0960-0779

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54120671
Subject category
S97: MATHEMATICAL METHODS AND COMPUTING;
Descriptors DEI
DEGREES OF FREEDOM; DESIGN; FRACTALS; INTEGRATED CIRCUITS
Descriptors DEC
ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS

Optional Information

Copyright
Copyright (c) 2019 Elsevier Ltd. All rights reserved.