YBaCuO thin films on Si substrate

YBa2Cu3O7-x (YBaCuO) films of 200nm thickness on Si substrates covered by 20nm ZrO2 were prepared by two-laser ablation technique. The influence of the ZrO2 buffer sublayer preparation conditions on Si diffusion into high-temperature super-conductor (HTSC) film were investigated. To overcome the diffusion process we proposed and realized two approaches. First: a homoepitaxy technique of HTSC film deposition. Second: a two-step ZrO2 sublayer creation technique. The critical temperature Tc(R=0) of the YBaCuO thin films on Si substrates was as high as 88,5 K. (orig.)