Published 1983 | Version v1
Journal article Metadata-only

In-depth profiling of implanted ions in thin insulating layers by AES and ion etching: P and B in SiO2

Creators

  • 1. Rostock Univ. (German Democratic Republic). Sektion Physik
  • 2. Ceskoslovenska Akademie Ved, Prague. Fyzikalni Ustav

Description

Implantation profiles of B (and P) in SiO2 are calculated and experimentally analyzed by AES, SIMS and ESCA. The electron beam induced distortion of implantation profile shapes in insulators is stressed. Concerned evaluation problems are pointed out. (author)

Additional details

Publishing Information

Journal Title
Wiss. Z. Wilhelm-Pieck-Univ. Rostock, Naturwiss. Reihe
Journal Volume
32
Journal Issue
2
Series
Wiss. Z. Wilhelm-Pieck-Univ. Rostock, Naturwiss. Reihe.
Journal Page Range
12-20
ISSN
0323-4681

INIS

Country of Publication
German Democratic Republic
Country of Input or Organization
German Democratic Republic
INIS RN
15029418
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARGON ISOTOPES; AUGER ELECTRON SPECTROSCOPY; BORON ISOTOPES; DEPTH; ELECTRON BEAMS; ION BEAMS; ION IMPLANTATION; KEV RANGE 01-10; KEV RANGE 10-100; LAYERS; PHOSPHORUS ISOTOPES; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; SPATIAL DISTRIBUTION; SPUTTERING; XENON ISOTOPES
Descriptors DEC
BEAMS; CHALCOGENIDES; DIMENSIONS; DISTRIBUTION; ELECTRON SPECTROSCOPY; ENERGY RANGE; KEV RANGE; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SILICON COMPOUNDS; SPECTROSCOPY