Published January 15, 2008 | Version v1
Journal article

Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation

  • 1. Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)
  • 2. Ingenieria de Circuitos y Sistemas, EUITT, UPM, Ctra. de Valencia km 7.5, 28031 Madrid (Spain)
  • 3. STMicroelectronics, via C. Olivetti 1, Agrate Brianza I-20041 (Italy)
  • 4. MDM Laboratory, CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041 (Italy)

Description

Phase transformations of crystalline Ge2Sb2Te5 films upon pulsed laser irradiation have been studied using in situ reflectivity measurements with temporal resolution. Two different configurations allowed point probing with nanosecond temporal resolution and imaging with subpicosecond temporal and micrometer spatial resolution. The role of the pulse duration and laser fluence on the dynamics of the phase change and the degree of amorphization is discussed. Several advantageous features of femtosecond compared to nanosecond laser-induced amorphization are identified. Moreover, a high-resolution study of the amorphization dynamics reveals the onset of amorphization at moderate fluences to occur within ∼100 ps after arrival of the laser pulse. At high fluences, amorphization occurs after ∼430 ps and the molten phase is characterized by an anomalously low reflectivity value, indicative of a state of extreme supercooling

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
103
Journal Issue
2
Journal Page Range
p. 023516-023516.7
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2008 American Institute of Physics