Published December 1999 | Version v1
Journal article Metadata-only

Effect of BF2+ implanted in hardened Si-gate PMOSFET

Creators

  • 1. Xidian Univ., Xi'an (China). Microelectronics Research Inst.
  • 2. Northwest Nuclear Technology Inst., Xi'an (China)
  • 3. Xi'an Microelectronics Research Inst., Xi'an (China)

Description

The relation between the threshold voltage shift of BF2+ implanted Si-gate PMOSFET and the total γ-irradiation dose has been systematically studied, and the mechanism of γ-irradiation hardening for BF2+ implantation has also been analyzed in detail. The studies show that BF2+ implantation has a strong suppression for the threshold voltage shift of BF2+ implanted Si-gate PMOSFET under γ-irradiation; optimum BF2+ implantation dose in the hardened Si-Gate PMOSFET ranges from 5 x 1014-2 x 1015 cm-2; F atoms distributed at SiO2/Si interface, which suppress the oxide-trap charges and interface-trap charges produced under γ-irradiation, may be the main origin of BF2+-implanted and hardened Si-gate PMOSFET

Additional details

Publishing Information

Journal Title
Acta Physica Sinica
Journal Volume
48
Journal Issue
12
Journal Page Range
p. 2299-2303
ISSN
1000-3290

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
31041230
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BARIUM FLUORIDES; DOSE-RESPONSE RELATIONSHIPS; GAMMA RADIATION; ION IMPLANTATION; MOSFET; P-TYPE CONDUCTORS; RADIATION HARDENING; SILICON
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; FIELD EFFECT TRANSISTORS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HARDENING; IONIZING RADIATIONS; MATERIALS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSISTORS