Published 1985
| Version v1
Miscellaneous
Open
Vibrational properties of amorphous semiconductors
Description
A model for the lattice dynamics of a-Si1-X NX is introduced. This model is based on a Born hamiltonian, solved in the Bethe lattice approximation. Starting from the local density of vibrational states, we analize the infrared absoption spectra of this material. (author)
Availability note (English)
MF available from INIS under the Report Number.Abstract (Portuguese)
Apresenta-se um modelo para a dinamica de rede do a-Si1-X NX. Esse modelo se baseia em um hamiltoniano de Born, resolvido na aproximacao da rede de Bethe. A partir da densidade local de modos normais de vibracao, obtida pelo metodo das funcoes de Green, analisamos o espectro de absorcaono infravermelho desse material. (autor)Files
20064703.pdf
Files
(1.7 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:c1c08ddcc5c7298edc0d3ca004b24e52
|
1.7 MB | Preview Download |
Additional details
Additional titles
- Original title (Portuguese)
- Propriedades vibracionais de semicondutores amorfos
Publishing Information
- Imprint Pagination
- 67 p.
- Report number
- INIS-BR--1560
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 20064703
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- AMORPHOUS STATE; CRYSTAL MODELS; INFRARED SPECTRA; LATTICE VIBRATIONS; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; VIBRATIONAL STATES
- Descriptors DEC
- ENERGY LEVELS; EXCITED STATES; MATERIALS; MATHEMATICAL MODELS; NITRIDES; NITROGEN COMPOUNDS; SILICON COMPOUNDS; SPECTRA