Published September 30, 2012 | Version v1
Journal article

Optical properties of bismuth-doped silica fibres in the temperature range 300 — 1500 K

Description

The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi3+ profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2012v042n09ABEH014894

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
42
Journal Issue
9
Journal Page Range
p. 762-769
ISSN
1063-7818