Published May 6, 2016 | Version v1
Journal article

Thickness dependent structural, magnetic and magneto-transport properties of epitaxial Nd0.50Sr0.50MnO3 thin films

  • 1. School of Basic and Applied Sciences, K. R. Mangalam University, Sohna Road, Gurgaon, Haryana 122103 (India)
  • 2. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

Description

We report the thickness-dependent structural, magnetic and magneto-transport properties in epitaxial Nd0.50Sr0.50MnO3 thin films (10 to 300nm) prepared by DC magnetron sputtering technique on single crystalline (001) oriented substrate LaAlO3. X-ray diffraction pattern reveals the epitaxial growth of all the films and the out-of-plane lattice parameter of films were found to increase with thickness. As thickness of the film increases the paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature (TC), charge ordered transition temperature (TCO) and magnetic moment were found to increase with a strong bifurcation in ZFC-FC magnetization. The asymmetry in the coercivity seen in field dependent magnetization loops (M-H loops) suggests the presence of exchange bias (EB) effect. While temperature dependent resistivity of films show the semiconducting nature for thickness 10-200nm in temperature range from 5-300K, the film of thickness 300nm shows the insulator to metal transition with transition temperature (TIM) at 175K. Temperature dependent low field magnetoresistance (LFMR) measured at 4kOe found to decrease with thickness and for high field magnetoresistance (HFMR) at 40kOe and 60kOe also show similar dependence and a crossover at intermediate temperature range in the magnitude of MR between 10nm and 200nm films at constant field. Colossal increase in magnetoresistance observed for 10nm film at low temperature.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1728
Journal Issue
1
Journal Page Range
vp.
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on condensed matter and applied physics
Acronym
ICC 2015
Dates
30-31 Oct 2015
Place
Bikaner (India)

Optional Information

Notes
(c) 2016 Author(s)