Published July 2003 | Version v1
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Developments of new laser crystals doped with Yb ions

  • 1. Japan Atomic Energy Research Inst., Kansai Research Establishment, Kizu, Kyoto (Japan)
  • 2. Mitsui Mining and Smelting Co., Ltd., Corporate R and D Center, Ageo, Saitama (Japan)

Description

In the development of laser crystal suitable for the ultra high peak power CPA (Chirped Pulse Amplification) laser system with a compact size, fluoride YLF laser crystals doped with Yb3+ rare earth ion have been grown by a vertical Bridgman method. To prevent opaque crystal growth, one of growth materials, YF3 and PbF2 as a scavenger were mixed and heated twice in the vacuum furnace to get rid of YOF. We also adjusted the temperature gradient at the crystal growth surface and a mixing rate of the initial materials of LiF and YF3. As a result, Yb doped YLF crystal was successfully grown with the optimum temperature gradient of 30 - 40degC/cm, and the rate of 60:40 for LiF:YF3 in mol-%. (author)

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Part of:
Proceedings of the fourth symposium on advanced photon research

Additional details

Publishing Information

Imprint Title
Proceedings of the fourth symposium on advanced photon research
Imprint Pagination
304 p.
Journal Page Range
p. 90-93
Report number
JAERI-Conf--2003-008

Conference

Title
4. symposium on advanced photon research
Dates
28-29 Nov 2002
Place
Kizu, Kyoto (Japan)

Optional Information

Notes
4 refs., 4 figs., 1 tab.; This record replaces 35019801