Published November 2011
| Version v1
Journal article
Semiconductor voltage limiters based on silicon structures in electronic circuits
Creators
- 1. JSC 'Foton', Tashkent (Uzbekistan)
- 2. AS RU, Physical-technical institute, Tashkent (Uzbekistan)
Description
The possibility of using voltage limiters on the basis of the original principle electronic circuits, proposed first, and on the basis of the modernized known schemes is shown. The wide range of their applications indicates the importance of protecting electronic devices and the usefulness to extend the life of different unique units and components. Developers of electronic devices must pay attention to the given path of extending the life of the various elements and devices. (authors)
Additional details
Additional titles
- Original title (Russian)
- Полупроводниковые ограничители напряжения на основе кремниевых структур в электронных схемах
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 13
- Journal Issue
- 6
- Journal Page Range
- p. 421-429
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 44127916
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BASES; COMPUTER OUTPUT DEVICES; DEVELOPERS; ELECTRIC POTENTIAL; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; LIMITERS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS
- Descriptors DEC
- ELEMENTS; EQUIPMENT; MATERIALS; SEMICONDUCTOR DEVICES; SEMIMETALS
Optional Information
- Notes
- 8 refs., 7 figs.