Spin-torque diode with tunable sensitivity and bandwidth by out-of-plane magnetic field
- 1. Department of Electrical and Electronic Engineering, The University of Hong Kong (Hong Kong)
- 2. Department of Physics, The University of Hong Kong (Hong Kong)
- 3. School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China)
- 4. Spintronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
Description
Spin-torque diodes based on nanosized magnetic tunnel junctions are novel microwave detectors with high sensitivity and wide frequency bandwidth. While previous reports mainly focus on improving the sensitivity, the approaches to extend the bandwidth are limited. This work experimentally demonstrates that through optimizing the orientation of the external magnetic field, wide bandwidth can be achieved while maintaining high sensitivity. The mechanism of the frequency- and sensitivity-tuning is investigated through analyzing the dependence of resonant frequency and DC voltage on the magnitude and the tilt angle of hard-plane magnetic field. The frequency dependence is qualitatively explicated by Kittel's ferromagnetic resonance model. The asymmetric resonant frequency at positive and negative magnetic field is verified by the numerical simulation considering the in-plane anisotropy. The DC voltage dependence is interpreted through evaluating the misalignment angle between the magnetization of the free layer and the reference layer. The tunability of the detector performance by the magnetic field angle is evaluated through characterizing the sensitivity and bandwidth under 3D magnetic field. The frequency bandwidth up to 9.8 GHz or maximum sensitivity up to 154 mV/mW (after impedance mismatch correction) can be achieved by tuning the angle of the applied magnetic field. The results show that the bandwidth and sensitivity can be controlled and adjusted through optimizing the orientation of the magnetic field for various applications and requirements.
Additional details
Identifiers
- DOI
- 10.1063/1.4953572;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 23
- Journal Page Range
- vp.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48035305
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; FERROMAGNETIC RESONANCE; FREQUENCY DEPENDENCE; GHZ RANGE; LAYERS; MAGNETIC FIELDS; MAGNETIC TUNNEL JUNCTIONS; MAGNETIZATION; MICROWAVE RADIATION; NANOSTRUCTURES; OPTIMIZATION; SENSITIVITY; SPIN; TORQUE
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTROMAGNETIC RADIATION; FREQUENCY RANGE; MAGNETIC RESONANCE; PARTICLE PROPERTIES; RADIATIONS; RESONANCE; SIMULATION; TUNNEL JUNCTIONS
Optional Information
- Notes
- (c) 2016 Author(s)