Published May 1, 1976 | Version v1
Journal article Metadata-only

Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

Creators

  • 1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

Description

Double-heterostructure Pb/sub 1-x/Sn/sub x/Te lasers with active regions of Pb0.782Sn0.218Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 1140K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 770K near 11.5 μm. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency

Additional details

Identifiers

DOI
10.1063/1.88820;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
28
Journal Issue
9
Series
Appl. Phys. Lett.
Journal Page Range
552-554
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7260722
Subject category
S42: ENGINEERING;
Descriptors DEI
CRYSTAL GROWTH; EFFICIENCY; EMISSION SPECTRA; EPITAXY; FABRICATION; INFRARED RADIATION; LEAD TELLURIDES; MOLECULAR BEAMS; OPERATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; TEMPERATURE DEPENDENCE; THRESHOLD ENERGY; TIN TELLURIDES; TUNING
Descriptors DEC
AMPLIFIERS; BEAMS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ENERGY; LASERS; LEAD COMPOUNDS; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS

Optional Information

Notes
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