Published 2000 | Version v1
Miscellaneous Metadata-only

Properties of Si:H and Si:He heated under high pressure and 'smart-cut' technology

Creators

  • 1. Instytut Technologii Elektronowej, Warsaw (Poland)
  • 2. Instytut Technologii Materialow Elektronicznych, Warsaw (Poland)
  • 3. Instytut Fizyki, Polska Akademia Nauk, Warsaw (Poland)
  • 4. University of Barcelona, Barcelona (Spain)
  • 5. CNR-IMETEM Institute Stradale Primosole, Catania (Italy)

Description

no abstract available

Part of:
Abstracts book of 7. Scientific Conference 'Electronic Technology' ELTE 2000

Additional details

Additional titles

Original title (Polish)
Wlasnosci Si:H i Si:He wygrzewanych pod wysokim cisnieniem, a technologia 'smart-cut'

Publishing Information

Imprint Title
Abstracts book of 7. Scientific Conference 'Electronic Technology' ELTE 2000
Imprint Pagination
[RP 1-9; RS 1; ME 1-78; MN 1-58; F 1-73; TP 1-48; MG 1-16; MS 1-51]
Journal Page Range
p. ME, 21

Conference

Title
7. Scientific Conference 'Electronic Technology' ELTE 2000
Original Conference Title
7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000
Dates
18-22 Sep 2000
Place
Polanica-Zdroj (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32031632
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
BONDING; CRYSTAL DEFECTS; HEAT TREATMENTS; HELIUM IONS; HYDROGEN IONS; ION IMPLANTATION; LAYERS; MASS SPECTROSCOPY; PHOTOLUMINESCENCE; SILICON; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VERY HIGH PRESSURE
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; FABRICATION; FILMS; IONS; JOINING; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE

Optional Information

Contract/Grant/Project number
KBN grant no. 7T08A057
Notes
2 refs Imprint:Zbior streszczen 7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000