Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes
- 1. Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
- 2. Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Description
In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2014.03.065Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2014.03.065;
- PII
- S0040-6090(14)00357-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 570
- Journal Issue
- Part B
- Journal Page Range
- p. 326-329
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International thin films conference
- Acronym
- TACT 2013
- Dates
- 5-9 Oct 2013
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47004277
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINATES; ELECTROLUMINESCENCE; FLUORESCENT LAMPS; GALLIUM NITRIDES; GLASS; HYDROGEN; LIGHT EMITTING DIODES; LIGHT SOURCES; NANOSTRUCTURES; NEODYMIUM LASERS; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC EFFECT; REFLECTION; SOLAR CELLS; THIN FILMS; VISIBLE RADIATION; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; FILMS; GALLIUM COMPOUNDS; LASERS; LIGHT BULBS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OPTICAL EQUIPMENT; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTON EMISSION; PHOTOVOLTAIC CELLS; PNICTIDES; RADIATION SOURCES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLAR EQUIPMENT; SOLID STATE LASERS; TRANSDUCERS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.