Published April 10, 2007 | Version v1
Journal article

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy

  • 1. CEA-CNRS-UJF group 'Nanophysique et Semiconducteurs', DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
  • 2. European Synchrotron Radiation Facility (ESRF), BP 220, 38043 Grenoble (France)
  • 3. Louis Neel, CNRS, BP 166, 38042 Grenoble (France)

Description

We report on the intrinsic ferromagnetic properties of wurtzite Ga0.937Mn0.063N diluted magnetic semiconductor grown by plasma-assisted molecular beam epitaxy. The growth conditions were carefully optimized to obtain single phase (Ga,Mn)N samples. The high structural quality is confirmed by x-ray diffraction experiments. Ferromagnetism is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism spectra recorded at the Mn K-edge. The Curie temperature is found ≅8 K with a spontaneous magnetic moment of 2.4 μB per Mn at 2 K

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
893
Journal Issue
1
Journal Page Range
p. 1173-1174
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
28. international conference on the physics of semiconductors
Acronym
ICPS 2006
Dates
24-28 Jul 2006
Place
Vienna (Austria)

Optional Information

Notes
(c) 2007 American Institute of Physics