Published August 2, 2010 | Version v1
Journal article

Langmuir-Blodgett films of ethylenedithiotetrathiafulvalene derivative containing hydroxyl groups

  • 1. Chemistry Division, BARC, Trombay-400085 (India)
  • 2. Technical Physics and Prototype Engineering Division, BARC, Trombay-400085 (India)
  • 3. Department of Biotechnology, IIT Madras, Chennai-600 036 (India)
  • 4. Department of Chemistry, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, 152-8551 (Japan)

Description

Langmuir-Blodgett (LB) films of an ethylenedithiotetrathiafulvalene (EDT-TTF) derivative containing hydroxyl groups, 4, 5-bis(11-hydroxyundecylthio)-4', 5'-ethylenedithiotetrathiafulvalene were deposited without using stabilizer molecules. Doping of the film with iodine leads to oxidation of EDT-TTF moiety as evidenced by UV-vis and IR spectroscopy. X-ray diffraction studies reveal the presence of layered arrangement of the EDT-TTF derivative molecules in the LB film. Cyclic voltammetry studies indicate that the electrochemical oxidation of the EDT-TTF derivative in its LB film is irreversible. Due to the insulating nature of the alkyl chains, only the first layer of the LB film was found to be redox-active. The electrical conductivity of the 25 layer LB film was found to increase by two orders of magnitude on doping with iodine. On equilibrating the doped film in air, the conductivity gradually reduced with time and finally reached the conductivity of undoped film. This reversibility could be because of the steric hindrance induced by the two long alkyl groups. The alkyl chains help in rendering the EDT-TTF molecule amiable to LB film formation but are found to reduce the electrical conductivity of the films and also cause instability of the doped state. The hydroxyl groups at the end of the alky chain impart amphiphilic nature to the molecules and help in stabilizing the film at the air-water interface.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.05.067

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.05.067;
PII
S0040-6090(10)00737-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
20
Journal Page Range
p. 5820-5826
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Materials Today Asia conference
Dates
3-5 Sep 2007
Place
Beijing (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42060027
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; INFRARED SPECTRA; INSTABILITY; INTERFACES; IODINE; LAYERS; OXIDATION; TETRATHIAFULVALENE; THIN FILMS; VOLTAMETRY; X-RAY DIFFRACTION
Descriptors DEC
CHEMICAL REACTIONS; CHEMISTRY; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; HALOGENS; HETEROCYCLIC COMPOUNDS; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SULFUR COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SPECTRA

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.