Published November 1987
| Version v1
Miscellaneous
Ion beam mixing of GaAs ohmic contacts
Creators
- 1. Royal Melbourne Inst. of Tech. (Australia). Microelectronics Technology Centre
Description
Thin Sn layers on GaAs have been mixed using Ar+, Kr+ and Xe+ ions at substrate temperatures from -196 deg C to 225 deg C. Both ballistic mixing and radiation enhanced mixing regimes have been identified. In the former regime, peak Sn concentrations exceeding 20 atomic percent are achievable. Subsequent annealing gives rise to eutectic formation and the possible formation of intermetallic compounds which allow satisfactory non-alloyed ohmic contacts to be fabricated
Additional details
Publishing Information
- Publisher
- AINSE.
- Imprint Place
- Lucas Heights (Australia)
- Imprint Title
- Fifth Australian conference on nuclear techniques of analysis : proceedings
- Imprint Pagination
- 266 p.
- Journal Page Range
- p. 89-91.
- Report number
- INIS-mf--11495
Conference
- Title
- 5. Australian conference on nuclear techniques of analysis.
- Dates
- 4-6 Nov 1987.
- Place
- Lucas Heights (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 20059717
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; BACKSCATTERING; GALLIUM ARSENIDES; ION BEAMS; KRYPTON IONS; RUTHERFORD SCATTERING; SURFACE PROPERTIES; XENON IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; ELASTIC SCATTERING; GALLIUM COMPOUNDS; IONS; SCATTERING