Published October 4, 2006
| Version v1
Journal article
Electrical conduction and photoconduction in Se80-xTe20Bix thin films
Creators
- 1. Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar-143005, Punjab (India)
Description
The dark conductivity and photoconductivity of Se80-xTe20Bix (0≤x≤1) thin films have been studied. The values of dc activation energy, optical band gap and photoconduction activation energy are found to decrease with the addition of bismuth content. The optical energy gap has been found to be approximately equal to twice the dark thermal activation energy in all the compositions studied. The variation of photocurrent with illumination intensity indicates that the recombination mechanism is bimolecular
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/18/9129/cm6_39_038.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/18/9129/cm6_39_038.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/18/39/038;
- PII
- S0953-8984(06)20360-6;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 18
- Journal Issue
- 39
- Journal Page Range
- p. 9129-9134
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38012288
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; BISMUTH; CONCENTRATION RATIO; ENERGY GAP; ILLUMINANCE; INTERMETALLIC COMPOUNDS; PHOTOCONDUCTIVITY; RECOMBINATION; SELENIUM; TELLURIUM; THIN FILMS; VARIATIONS
- Descriptors DEC
- ALLOYS; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; FILMS; METALS; PHYSICAL PROPERTIES; SEMIMETALS