Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors
Creators
- 1. Graduate School, Chinese Academy of Sciences, Beijing 100080 (China)
- 2. R and D Center of Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800 (China)
Description
TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.08.072Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.08.072;
- PII
- S0169-4332(08)01850-3;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 9
- Journal Page Range
- p. 4733-4737
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44009180
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CRYSTAL DEFECTS; DAMAGE; DEPOSITION; ELECTRON BEAMS; EVAPORATION; FILMS; IMPURITIES; LASER RADIATION; LAYERS; OSCILLATION MODES; RAMAN SPECTRA; REFLECTIVITY; REFRACTIVE INDEX; SILICON OXIDES; SPECTROSCOPY; STOICHIOMETRY; THICKNESS; TITANIUM OXIDES; X RADIATION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; DIMENSIONS; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; LEPTON BEAMS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS; SORPTION; SPECTRA; SURFACE PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.