Published July 2017
| Version v1
Journal article
Development of fountain detectors for spectroscopy of secondary electron in SEM
- 1. University of Tsukuba (Japan)
- 2. National Institute for Materials Science, Tsukuba (Japan)
Description
To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p-n junction of 4H-SiC was observed using spherical FD and the image was much clear than that using conventional detector. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201700057Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 14
- Journal Issue
- 7
- Journal Page Range
- p. 1-5
- ISSN
- 1610-1642
- CODEN
- PSSCGL
Conference
- Title
- Gettering and defect engineering in semiconductor technology
- Acronym
- GADEST 2017
- Dates
- 1-6 Oct 2017
- Place
- Lopota resort (Georgia)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 48078906
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; DESIGN; ELECTRON EMISSION; P-N JUNCTIONS; RADIATION DETECTORS; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SILICON CARBIDES; SPATIAL RESOLUTION; SURFACE POTENTIAL; TRAJECTORIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRON MICROSCOPY; EMISSION; MEASURING INSTRUMENTS; MICROSCOPY; POTENTIALS; RESOLUTION; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SIMULATION
Optional Information
- Notes
- With 9 figs.