Published July 1972
| Version v1
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Simulation of gamma ray effects on bipolar transistors using the CAO programs
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Files
4039239.pdf
Files
(388.5 kB)
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Additional details
Additional titles
- Original title (French)
- Simulation des effets des rayonnements gamma sur les transistors bipolaires a l'aide des programmes C.A.O
Publishing Information
- Imprint Pagination
- 29 p.
- Report number
- CEA-R--4337
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 4039239
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- GAMMA RADIATION; I CODES; PHOTOELECTRIC EFFECT; PHOTON BEAMS; RADIATION EFFECTS; SIMULATION; TRANSISTORS
- Descriptors DEC
- BEAMS; COMPUTER CODES; ELECTROMAGNETIC RADIATION; RADIATIONS; SEMICONDUCTOR DEVICES