Published April 1986 | Version v1
Journal article Metadata-only

Epitaxial deposition of monocrystalline tungsten using chemical transport reactions

Creators

Description

Epitaxial deposition of tungsten on monocrystalline molybdenum substrates is studied in the tungsten-chlorine gas-phase transport system. The kinetics of mass tansfer and face growth is investigated in a broad range of technological parameters. It is found that molecular and kinetic regimes of deposition are realised in the given transport system

Additional details

Additional titles

Original title (Russian)
Эпитаксиальное выращивание монокристаллического вольфрама путем химических транспортных реакций

Publishing Information

Journal Title
Poverkhn.: Fiz., Khim., Mekh.
Journal Issue
no.4
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
18005140
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; EPITAXY; HIGH TEMPERATURE; MASS TRANSFER; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TUNGSTEN
Descriptors DEC
CHEMICAL COATING; CRYSTALS; DEPOSITION; ELEMENTS; METALS; SURFACE COATING; TRANSITION ELEMENTS