Published December 1991
| Version v1
Journal article
In situ characterization of the initial growth stage of GaAs on Si by coaxial impact-collision ion scattering spectroscopy
- 1. Optoelectronics Technology Research Lab., Tsukuba, Ibaraki (Japan)
Description
The initial growth stage of GaAs on Si has been characterized in situ by coaxial impact-collision ion scattering spectroscopy (CAICISS). The behavior of As atoms on the Si surface and at the step sites is analyzed. The results of analysis on the initial growth stage strongly suggest that the three-dimensional island growth of GaAs on Si occurs even in 1-monolayer (ML) GaAs growth. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers and Short Notes
- Journal Volume
- 30
- Journal Issue
- 12,B
- Series
- Jpn. J. Appl. Phys., Part 1 Reg. Pap. Short Notes.;JAPND.
- Journal Page Range
- 3755-3758
- CODEN
- JAPND
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 23052049
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; CRYSTAL GROWTH; EPITAXY; GALLIUM ARSENIDES; ION SCATTERING ANALYSIS; MOLECULAR BEAMS; SILICON; SURFACES; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHEMICAL ANALYSIS; CRYSTAL GROWTH METHODS; DISTRIBUTION; ELEMENTS; GALLIUM COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PNICTIDES; SEMIMETALS