Published December 2, 2013
| Version v1
Journal article
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Description
A scattering mechanism related to the Schottky barrier height (SBH) spatial fluctuation of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is presented. We find that the low field mobility is on the order of 104–106 cm2/Vs. The 2DEG transport properties are found to be influenced by both the mobility and 2DEG density variations caused by the SBH fluctuation. Our results indicate that a uniform Schottky contact is highly desired to minimize the influence of SBH inhomogeneity on the device performance
Additional details
Identifiers
- DOI
- 10.1063/1.4841715;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 23
- Journal Page Range
- p. 232109-232109.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45075093
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRON GAS; ELECTRON MOBILITY; FLUCTUATIONS; GALLIUM NITRIDES; SCATTERING; TRANSISTORS; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- GALLIUM COMPOUNDS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR DEVICES; VARIATIONS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC