Published October 1977
| Version v1
Journal article
Boron-implanted silicon resistors
Description
The sheet resistance of silicon resistors implanted with boron at room temperature has been experimentally determined for doses from 5 x 1012 to 2 x 1016 cm-2. The results have been compared with the calculated values. Two methods for minimizing the temperature coefficients, TCR, are described, and their merits and disadvantages are discussed. For a 1 kΩ resistor, TCR can be reduced to 1000 ppm/0C by implanting 11B+ at low energy, 5 to 10 keV, and to less than 100 ppm/0C by implanting a suitable dose of Ar+ damage. In a two-terminal resistor the end effect of the total sheet resistance on TCR and on voltage coefficient VCR was also investigated. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Solid-State Electronics
- Journal Volume
- 20
- Journal Issue
- 10
- Series
- Solid-State Electron.
- Journal Page Range
- 803-812
- ISSN
- 0038-1101
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 9352844
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ARGON IONS; BORON IONS; BORON 11; CATIONS; COMPARATIVE EVALUATIONS; DOSE-RESPONSE RELATIONSHIPS; ION IMPLANTATION; KEV RANGE 01-10; MEDIUM TEMPERATURE; SEMICONDUCTOR RESISTORS; SILICON; TEMPERATURE COEFFICIENT
- Descriptors DEC
- ATOMIC IONS; BORON ISOTOPES; CHARGED PARTICLES; ELECTRICAL EQUIPMENT; ELEMENTS; ENERGY RANGE; IONS; ISOTOPES; KEV RANGE; LIGHT NUCLEI; NUCLEI; ODD-EVEN NUCLEI; REACTIVITY COEFFICIENTS; RESISTORS; SEMICONDUCTOR DEVICES; SEMIMETALS; STABLE ISOTOPES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent