Published March 2010
| Version v1
Journal article
Growth features and structure of the epitaxial films of GaSe, InSe compounds in correlation with physical properties
Description
Research of growth features and structure of the epitaxial film of GaSe, InSe compounds have been carried out in correlation with their physical properties. The films were obtained by the molecular beam condensation method on various substrates. Optimum conditions of reception amorphous, polycrystalline, oriented and epitaxial films of the specified compounds have been determined. Correlation between structural perfection and electrophysical parameters for received epitaxial films has been established. it is shown that depending on temperature of a source and a substrate it is possible to receive a film with various crystal structure and electrophysical parameters
Additional details
Publishing Information
- Journal Title
- Fizika (Baku)
- Journal Volume
- 16
- Journal Issue
- 1
- Journal Page Range
- p. 55-57
- ISSN
- 1028-8546
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 44074618
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXY; FILMS; GALLIUM COMPOUNDS; NUMERICAL DATA; PHYSICAL PROPERTIES; SAMPLE PREPARATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; INFORMATION; SCATTERING
Optional Information
- Notes
- Contains 3 figs, 13 refs
- Funding organization
- Azerbaijan National Academy of Sciences, Baku (Azerbaijan)