The influence of well and barrier conditions on InGaAsN/GaAs multiple quantum wells grown by using MOCVD

The effect of the well and the barrier thicknesses on InGaAsN/GaAs multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD). The results show that the satellite peak of the MQWs becomes unclear as the InGaAsN well thickness is increased beyond its critical thickness and that the InGaAsN/GaAs interface is compressed due to a relaxation of the InGaAsN layer. However, a red-shift in the PL wavelength is observed under the InGaAsN well thickness is increased up to 9.5 nm. The introduction of strain-compensated GaAsN layers can extend the emission wavelength, due to a reduction in the barrier potential. Moreover, inserting two InGaAsN layers with lower indium compositions may suppress the interdiffusion, thus giving better PL characteristics.