On the formation of thick and multiple layer SIMOX structures and their applications

This paper will address the formation of SIMOX structures with thick and multiple buried SiO2 layers by multiple oxygen implantation and growth of epitaxial Si by chemical vapor deposition (CVD). The results indicate that SIMOX material can be produced with a buried layer of any thickness or with any number of distinct buried oxide layers and distinct silicon layers. Thick and double buried SiO2 layer material may be useful for high voltage isolation and electric field shielding. In addition, the authors have demonstrated optical waveguide action in SIMOX wafers. This suggest that in a double buried SiO2 layer system, three dimensional stacked integration of silicon waveguides is possible, including two level optical interconnects. 9 refs., 4 figs