Published June 2011
| Version v1
Journal article
Fabrication of ordered GaAs nanowhiskers using electron-beam lithography
Creators
- 1. Russian Academy of Sciences, Nanotechnology Research and Education Center, St. Petersburg Academic University (Russian Federation)
- 2. St. Petersburg State University, Physics Faculty (Russian Federation)
- 3. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Description
The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10–150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 6
- Journal Page Range
- p. 822-827
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094890
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CATALYSTS; DROPLETS; ELECTRON BEAMS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SUBSTRATES; WHISKERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL GROWTH METHODS; CRYSTALS; EPITAXY; GALLIUM COMPOUNDS; LEPTON BEAMS; MONOCRYSTALS; PARTICLE BEAMS; PARTICLES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.