The predicaments and expectations in development of magnetic semiconductors
Creators
- 1. Spintronics Institute, University of Jinan, Jinan 250022 (China)
Description
Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room temperature magnetic semiconductors with strong and controllable s, p–d exchange interaction. With this s, p–d exchange interaction, one can utilize the spin degree of freedom to design applicable spintronics devices with very attractive functions that are not available in conventional semiconductors. Here, we first review the progress in understanding of this particular material and the dilemma to prepare a room temperature magnetic semiconductor. Then we discuss recent experimental progresses to pursue strong s, p–d interaction to realize room temperature magnetic semiconductors, which are achieved by introducing a very high concentration of magnetic atoms by means of low-temperature nonequilibrium growth. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/40/8/081501Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 40
- Journal Issue
- 8
- Journal Page Range
- [11 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51067477
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEGREES OF FREEDOM; MAGNETIC SEMICONDUCTORS; SPIN; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ANGULAR MOMENTUM; MATERIALS; PARTICLE PROPERTIES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE