Published May 1, 2009 | Version v1
Journal article Metadata-only

GaSb grown from Sn solvent at low temperatures by LPE

Creators

  • 1. Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico)

Description

The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/167/1/012024

Additional details

Identifiers

DOI
10.1088/1742-6596/167/1/012024;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
167
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
19. Latin American symposium on solid state physics
Acronym
SLAFES 19
Dates
5-10 Oct 2008
Place
Puerto Iguazu (Argentina)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41103439
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; GALLIUM ANTIMONIDES; LAYERS; LIQUID PHASE EPITAXY; PHASE DIAGRAMS; PHOTOLUMINESCENCE; RECOMBINATION; SOLUTIONS; SOLVENTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; DIAGRAMS; DISPERSIONS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INFORMATION; LUMINESCENCE; MIXTURES; PHOTON EMISSION; PNICTIDES; TEMPERATURE RANGE