Published June 2011 | Version v1
Journal article

Abnormal subgrain growth in a dislocation-based model of recovery

  • 1. Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)
  • 2. Department of Materials Physics, Eötvös University, Pázmány Péter stny. 1/a., H-1117 Budapest (Hungary)

Description

Simulation of subgrain growth during recovery is carried out using two-dimensional discrete dislocation dynamics on a hexagonal crystal lattice having three symmetric slip planes. To account for elevated temperature (i) dislocation climb was allowed and (ii) a Langevin type thermal noise was added to the force acting on the dislocations. During the simulation, a random ensemble of dislocations develops into a subgrain structure and power-law type growth kinetics are observed. The growth exponent is found to be independent of the climb mobility, but dependent on the temperature introduced by the thermal noise. The in-depth statistical analysis of the subgrain structure shows that the coarsening is abnormal, i.e. larger cells grow faster than the small ones, while the average misorientation between the adjacent subgrains remains nearly constant. During the coarsening Holt's relation is found not to be fulfilled, such that the average subgrain size is not proportional to the average dislocation spacing. These findings are consistent with recent high precision experiments on recovery

Availability note (English)

Available from http://dx.doi.org/10.1088/0965-0393/19/4/045008

Additional details

Identifiers

DOI
10.1088/0965-0393/19/4/045008;
PII
S0965-0393(11)72659-6;

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
19
Journal Issue
4
Journal Page Range
[16 p.]
ISSN
0965-0393

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45005043
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACCURACY; CRYSTAL LATTICES; DISLOCATIONS; SIMULATION; SLIP
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS