Abnormal subgrain growth in a dislocation-based model of recovery
- 1. Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)
- 2. Department of Materials Physics, Eötvös University, Pázmány Péter stny. 1/a., H-1117 Budapest (Hungary)
Description
Simulation of subgrain growth during recovery is carried out using two-dimensional discrete dislocation dynamics on a hexagonal crystal lattice having three symmetric slip planes. To account for elevated temperature (i) dislocation climb was allowed and (ii) a Langevin type thermal noise was added to the force acting on the dislocations. During the simulation, a random ensemble of dislocations develops into a subgrain structure and power-law type growth kinetics are observed. The growth exponent is found to be independent of the climb mobility, but dependent on the temperature introduced by the thermal noise. The in-depth statistical analysis of the subgrain structure shows that the coarsening is abnormal, i.e. larger cells grow faster than the small ones, while the average misorientation between the adjacent subgrains remains nearly constant. During the coarsening Holt's relation is found not to be fulfilled, such that the average subgrain size is not proportional to the average dislocation spacing. These findings are consistent with recent high precision experiments on recovery
Availability note (English)
Available from http://dx.doi.org/10.1088/0965-0393/19/4/045008Additional details
Identifiers
- DOI
- 10.1088/0965-0393/19/4/045008;
- PII
- S0965-0393(11)72659-6;
Publishing Information
- Journal Title
- Modelling and Simulation in Materials Science and Engineering
- Journal Volume
- 19
- Journal Issue
- 4
- Journal Page Range
- [16 p.]
- ISSN
- 0965-0393
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45005043
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACCURACY; CRYSTAL LATTICES; DISLOCATIONS; SIMULATION; SLIP
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS