Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i -region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured. (paper)