Transmission electron microscopy and Auger electron spectroscopy studies of boron implanted silicon single crystals

The damage and ion distributions resulting from room-temperature bombardment of (111) silicon single crystal surfaces with 300 keV boron ions to a dose of 1017 cm-2 are studied by cross sectional transmission electron microscopy (TEM) and Auger electron spectroscopy (AES). The peak of the damage distribution is found to coincide exactly with values predicted by the LSS theory. The evolution of the damage with annealing is studied to temperatures up to 1135 0C. Information on the development of dislocations from the damage zone is obtained and correlated with the boron depth distribution obtained by AES. Very convincing evidence of the redistribution of the boron atoms via pipediffusion follows from these studies. (author)