Published June 23, 2011
| Version v1
Journal article
Growth temperature influence on the GaN nanowires grown by MOVPE technique
Creators
- 1. Institute of Solid State Physics, University of Latvia (Latvia)
Description
GaN nanowires (NWs) were successfully grown by Vapor-Liquid-Solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns. The characterization by scanning electron microscopy (SEM) reveals an optimum growth temperature at 790 deg. C and X-ray diffraction (XRD) investigations indicates oriented crystallinity of grown NWs.
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/23/1/012026Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 23
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1757-899X
Conference
- Title
- Annual conference on functional materials and nanotechnologies
- Dates
- 5-8 Apr 2011
- Place
- Riga (Latvia)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43022724
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- GALLIUM NITRIDES; LIQUIDS; ORGANOMETALLIC COMPOUNDS; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SOLIDS; VAPOR PHASE EPITAXY; VAPORS; WIRES; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; FLUIDS; GALLIUM COMPOUNDS; GASES; MICROSCOPY; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PNICTIDES; SCATTERING