Published February 1, 2011
| Version v1
Journal article
Pr:YAlO3 microchip laser at 662 nm
- 1. Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, 11519 Prague (Czech Republic)
- 2. Crytur Ltd., 51101 Turnov (Czech Republic)
Description
A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼ 448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11 – 35°C. The best result 27.4 mW of output power has been reached at 11°C at 680 mW of pumping power. The slope efficiency related to the incident pumping power was ∼ 9%
Availability note (English)
Available from http://dx.doi.org/10.1002/lapl.201010108Additional details
Identifiers
Publishing Information
- Journal Title
- Laser physics letters (Internet)
- Journal Volume
- 8
- Journal Issue
- 2
- Journal Page Range
- p. 116-119
- ISSN
- 1612-202X
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46020075
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINATES; CRYSTALS; DIELECTRIC MATERIALS; EFFICIENCY; GALLIUM NITRIDES; MIRRORS; OPERATION; OPTICAL PUMPING; OPTICS; PRASEODYMIUM COMPOUNDS; RESONATORS; SOLID STATE LASERS; TEMPERATURE RANGE 0273-0400 K; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; LASERS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; PUMPING; RARE EARTH COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS