Detection of the paramagnetic recombination centers in irradiated silicon p-n-juctions

The methods of detection and identification of paramagnetic recombination centers in silicon p-n-junctions containing radiation defects are described. These methods are based on the phenomena of spin dependent recombination of nonequilibrium carriers through the excited triplet states of the radiation defects and on the anticrossing change of the photoconductivity of the samples. The features of detecting the paramagnetic centers by the microwave photoconductivity and by the photoelectrical methods under forward and reverse voltage applied to p-n-junctions were investigated. 9 refs.; 4 figs