Published 2000 | Version v1
Journal article

Trends in Plasma Processing for Ultra Large Scale Integration Technology

  • 1. Laboratorie Des Technologies de la Microelectronique CNRS EP 2073, Grenoble (France)
  • 2. France Telecom, Branche Development CNET-CNS, Meylan (France)
  • 3. Semicroelectronics, 38926, Crolles (France)
  • 4. LETI, CEA Technologies Avancees, Grenoble (France)

Description

A review of plasma processes involved in silicon device fabrication is presented in this paper. An example of plasma-assisted deposition processes for oxynitride thin film elaboration is presented in the first part of the paper. In the second part of the paper, silicon and dielectric etch processes are discussed and emphasis is put on the key issues which need to be solved in the near future. In the last part of the paper, the applications of plasma processes for advanced lithography techniques will also be discussed. (author)

Additional details

Publishing Information

Journal Title
Journal of Technical Physics
Journal Volume
41
Journal Issue
1
Journal Page Range
p. 35-50
ISSN
0324-8313

Conference

Title
International Conference on Phenomena in Ionized Gases
Dates
11-16 Jul 1999
Place
Warsaw (Poland)

Optional Information

Notes
37 refs, 10 figs, 1 tab