Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320--480 degree C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology