Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses

This work reports experiments concerning specific application of laser-produced plasma at IPPLM in Warsaw. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 μm, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced plasma was performed with the use of ''time-of-flight'' ion diagnostics simultaneously with other diagnostic methods. The results of laser-matter interaction were obtained in dependence on laser pulse parameters, illumination geometry and target material. The modified SiO2 layers and sample surface properties were characterised with the use of different methods at the Middle-East Technological University in Ankara and at the Warsaw University of technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions